6. IGN0160UM12
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IGN0160UM12

RF Transistor by Integra Technologies, Inc. (203 more products)
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The IGN0160UM12 from Integra Technologies is a GaN on SiC RF Transistor that operates from 0.1 to 6 GHz. The amplifier has been specified for use under class AB operation and provides an output power of more than 12 watts with a power gain of 17 dB. The amplifier requires a 50 V power supply. It is available in a metal based package sealed with Ceramic-Epoxy Lid and is ideal for Broadband applications.

Product Specifications

    Product Details

    • Part Number :
      IGN0160UM12
    • Manufacturer :
      Integra Technologies, Inc.
    • Description :
      High Power Broadband GaN Transistor from 0.1 to 6 GHz

    General Parameters

    • Transistor Type :
      HEMT
    • Technology :
      GaN on SiC
    • Application Industry :
      Wireless Infrastructure
    • CW/Pulse :
      CW
    • Frequency :
      0.1 to 6 GHz
    • Power :
      40.79 dBm
    • Power(W) :
      12 W
    • Power Gain (Gp) :
      16 to 19 dB
    • Input Return Loss :
      9 to 20 dB
    • VSWR :
      2.1:1
    • Class :
      AB
    • Supply Voltage :
      50 V
    • Drain Efficiency :
      50 to 75 %
    • Drain Leakage Current (Id) :
      1.2 mA
    • Junction Temperature (Tj) :
      -55 to 200 Degrees C
    • Storage Temperature :
      -55 to 150 Degrees C

    Technical Documents
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