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RF Amplifiers - Chip
210
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1 - 18 of 210 RF Amplifiers
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MicroWave Technology - MSM Series
RF Amplifier
from
MicroWave Technology
Description
: Pre-Amplifiers for MRI Coils
Configuration:
IC/MMIC/SMT
Type:
Pre-Amplifier, Low Noise Amplifier
Frequency:
64 to 298 MHz
Gain:
28 dB
Noise Figure:
0.45 to 0.55 dB
IP3:
20 dBm
Package Type:
Chip
more info
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Sumitomo Electric Device Innovations - SMM5728XZ
RF Amplifier
from
Sumitomo Electric Device Innovations
Description
: 71 to 76 GHz, E Band, Low Noise Power Amplifier Die
Configuration:
Die
Type:
Power Amplifier, Low Noise Amplifier
Frequency:
71 to 76 GHz
Gain:
19.5 to 32 dB
Noise Figure:
12 dB
Pulsed/CW:
CW
P1dB:
17 dBm
Saturated Power:
0.05 to 0.1 W
IP3:
20.5 to 24.5 dBm
Package Type:
Chip
more info
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Qorvo - QPA2213D
RF Amplifier
from
Qorvo
Description
: 2 W GaN Amplifier Die from 2 to 20 GHz
Industry Application:
Military, Radar
Configuration:
Die
Type:
Power Amplifier
Sub-Category:
GaN Amplifier
Frequency:
2 to 20 GHz
Gain:
18 dB
Noise Figure:
4 dB
Saturated Power:
2.5 W
Package Type:
Chip
more info
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NXP Semiconductors - A2I09VD030N
RF Amplifier
from
NXP Semiconductors
Description
: RF LDMOS Wideband Integrated Power Amplifier, 920 to 960 GHz
Industry Application:
Wireless Infrastructure
Configuration:
IC/MMIC/SMT
Type:
Power Amplifier
Frequency:
920 to 960 MHz
Gain:
34.4 to 34.5 dB
Pulsed/CW:
CW/Pulsed
P1dB:
45.19 dBm
Package Type:
Chip
more info
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OMMIC - CGY2651UH/C1
RF Amplifier
from
OMMIC
Description
: 10 Watt GaN Amplifier MMIC from 37 to 43 GHz
Industry Application:
Radar, Space, Wireless Infrastructure
Configuration:
Die
Type:
Power Amplifier
Sub-Category:
GaN Amplifier
Frequency:
37 to 43 GHz
Gain:
18 dB
Saturated Power:
12.58 W
Package Type:
Chip
more info
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Sumitomo Electric Device Innovations - SMM5731XZ
RF Amplifier
from
Sumitomo Electric Device Innovations
Description
: 81 to 86 GHz, E Band, Power Amplifier Die
Configuration:
Die
Type:
Power Amplifier
Frequency:
81 to 86 GHz
Gain:
20.5 to 33 dB
Noise Figure:
12 dB
Pulsed/CW:
CW
P1dB:
17 dBm
Saturated Power:
0.05 to 0.1 W
IP3:
20.5 to 24.5 dBm
Package Type:
Chip
more info
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Linear Technology - LTC6431-20
RF Amplifier
from
Linear Technology
Description
: 50 to 1000 MHz, 20.8 dB Gain Block and CATV Amplifier
Industry Application:
Broadcast, Cellular
Configuration:
IC/MMIC/SMT
Type:
Gain Block, CATV Amplifier
Frequency:
50 to 1000 MHz
Gain:
20.8 dB
Noise Figure:
2.6 dB
P1dB:
23.5 dBm
IP3:
47.2 to 48.2 dBm
Package Type:
Chip
more info
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Sumitomo Electric Device Innovations - SMM5730XZ
RF Amplifier
from
Sumitomo Electric Device Innovations
Description
: 81 to 86 GHz, E Band, Low Noise Power Amplifier Die
Configuration:
Die
Type:
Power Amplifier, Low Noise Amplifier
Frequency:
81 to 86 GHz
Gain:
20.5 to 33 dB
Noise Figure:
12 dB
Pulsed/CW:
CW
P1dB:
17 dBm
Saturated Power:
0.05 to 0.1 W
IP3:
20.5 to 24.5 dBm
Package Type:
Chip
more info
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Sumitomo Electric Device Innovations - SMM5729XZ
RF Amplifier
from
Sumitomo Electric Device Innovations
Description
: 71 to 76 GHz, E Band, Power Amplifier Die
Configuration:
Die
Type:
Power Amplifier
Frequency:
71 to 76 GHz
Gain:
19.5 to 32 dB
Noise Figure:
12 dB
Pulsed/CW:
CW
P1dB:
17 dBm
Saturated Power:
0.05 to 0.1 W
IP3:
20.5 to 24.5 dBm
Package Type:
Chip
more info
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Sumitomo Electric Device Innovations - SMM5846X
RF Amplifier
from
Sumitomo Electric Device Innovations
Description
: 27.5 to 29.5 GHz, C Band, V Band, Ka Band, Power Amplifier Die
Industry Application:
Broadcast
Configuration:
Die
Type:
Power Amplifier
Frequency:
27.5 to 29.5 GHz
Gain:
20 dB
Pulsed/CW:
CW
P1dB:
31 dBm
IP3:
39 dBm
Package Type:
Chip
more info
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Sumitomo Electric Device Innovations - SMM5724XZ
RF Amplifier
from
Sumitomo Electric Device Innovations
Description
: 24 to 30 GHz, Ku Band, V Band, Low Noise Power Amplifier Die
Industry Application:
SATCOM, Broadcast
Configuration:
Die
Type:
Power Amplifier, Low Noise Amplifier, Driver Ampli...
Frequency:
24 to 30 GHz
Gain:
20 dB
Noise Figure:
3.2 dB
Pulsed/CW:
CW
P1dB:
14 dBm
IP3:
4 dBm
Package Type:
Chip
more info
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Sumitomo Electric Device Innovations - SMM5723XZ
RF Amplifier
from
Sumitomo Electric Device Innovations
Description
: 17 to 23 GHz, Ku Band, V Band, Low Noise Power Amplifier Die
Industry Application:
Broadcast
Configuration:
Die
Type:
Power Amplifier, Low Noise Amplifier, Driver Ampli...
Frequency:
17 to 23 GHz
Gain:
20 dB
Noise Figure:
2.7 dB
Pulsed/CW:
CW
P1dB:
12 dBm
IP3:
4 dBm
Package Type:
Chip
more info
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Sumitomo Electric Device Innovations - SMM5850XZ
RF Amplifier
from
Sumitomo Electric Device Innovations
Description
: 31 to 34 GHz, C Band, V Band, Power Amplifier Die
Industry Application:
SATCOM, Broadcast
Configuration:
Die
Type:
Power Amplifier
Frequency:
31 to 34 GHz
Gain:
19 dB
Pulsed/CW:
CW
P1dB:
18 dBm
IP3:
27 dBm
Package Type:
Chip
more info
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Sumitomo Electric Device Innovations - FMM5716X
RF Amplifier
from
Sumitomo Electric Device Innovations
Description
: 57 to 64 GHz, Ku Band, V Band, Low Noise Power Amplifier Die
Industry Application:
SATCOM, Broadcast
Configuration:
Die
Type:
Power Amplifier, Low Noise Amplifier
Frequency:
57 to 64 GHz
Gain:
22 dB
Noise Figure:
5 dB
Pulsed/CW:
CW
P1dB:
10 dBm
Package Type:
Chip
more info
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Integrated Device Technology - IDTF0480
RF Amplifier
from
Integrated Device Technology
Description
: Internally matched Broadband RF VGA with High Linearity
Industry Application:
Commercial, Aerospace & Defense
Configuration:
IC/MMIC/SMT
Type:
Digital Variable Gain Amplifier, Variable Gain Amp...
Frequency:
400 to 2700 MHz
Gain:
13 dB
Noise Figure:
4 dB
P1dB:
22 dBm
IP3:
41 dBm
Package Type:
Chip, Surface Mount
more info
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Sumitomo Electric Device Innovations - SMM5727XZ
RF Amplifier
from
Sumitomo Electric Device Innovations
Description
: 71 to 86 GHz, E Band, Low Noise Power Amplifier Die
Configuration:
Die
Type:
Power Amplifier, Low Noise Amplifier, Driver Ampli...
Frequency:
71 to 86 GHz
Gain:
17 to 24.5 dB
Noise Figure:
5 to 6.5 dB
Pulsed/CW:
CW
P1dB:
8.5 to 12 dBm
IP3:
-5 to 5.5 dB
Package Type:
Chip
more info
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Microchip Technology - SST12CP21
RF Amplifier
from
Microchip Technology
Description
: 2.4 GHz High Power Amplifier with low EVM and Current Consumption for 256-QAM
Configuration:
IC/MMIC/SMT
Type:
Power Amplifier
Frequency:
2.4 to 2.5 GHz
Gain:
39 dB
P1dB:
30 dBm
Package Type:
Chip, Surface Mount
more info
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Sumitomo Electric Device Innovations - FMM5715X
RF Amplifier
from
Sumitomo Electric Device Innovations
Description
: 57 to 64 GHz, Power Amplifier Die
Industry Application:
Broadcast
Configuration:
Die
Type:
Power Amplifier
Frequency:
57 to 64 GHz
Gain:
14 dB
Pulsed/CW:
CW
P1dB:
12 to 16 dBm
Package Type:
Chip
more info
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sconfiguration:expand,stype:expand,ssub_category:collapsed,spulsed_cw:expand,swaveguide:collapsed,spackage_type:expand,simpedance:collapsed,sindustry_application:collapsed,stags:collapsed,stags_new:expandsconfiguration:expand,stype:expand,ssub_category:collapsed,spulsed_cw:expand,swaveguide:collapsed,spackage_type:expand,simpedance:collapsed,sindustry_application:collapsed,stags:collapsed,stags_new:expand
sconfiguration:multiple,stype:multiple,ssub_category:single,spulsed_cw:single,swaveguide:single,spackage_type:multiple,simpedance:single,sindustry_application:single,stags:single,stags_new:singlesconfiguration:multiple,stype:multiple,ssub_category:single,spulsed_cw:single,swaveguide:single,spackage_type:multiple,simpedance:single,sindustry_application:single,stags:single,stags_new:single
sfrequency:expand,sgain:expand,snoise_figure:expand,spower_dbm:expand,spower_w:expand,sp1db_dbm:collapsed,sp1db_w:collapsed,ssaturated_power_w:collapsed,sip3_dbm:collapsed,ssupply_voltage:collapsedsfrequency:expand,sgain:expand,snoise_figure:expand,spower_dbm:expand,spower_w:expand,sp1db_dbm:collapsed,sp1db_w:collapsed,ssaturated_power_w:collapsed,sip3_dbm:collapsed,ssupply_voltage:collapsed
sfrequency:63292,sgain:63295,snoise_figure:63307,spower_dbm:63310,spower_w:63313,sp1db_dbm:63316,sp1db_w:63319,ssaturated_power_w:63340,sip3_dbm:63322,ssupply_voltage:63401sfrequency:63292,sgain:63295,snoise_figure:63307,spower_dbm:63310,spower_w:63313,sp1db_dbm:63316,sp1db_w:63319,ssaturated_power_w:63340,sip3_dbm:63322,ssupply_voltage:63401
sfrequency:MHz,sgain:dB,snoise_figure:dB,spower_dbm:dBm,spower_w:W,sp1db_dbm:dBm,sp1db_w:W,ssaturated_power_w:W,sip3_dbm:dBm,ssupply_voltage:Vsfrequency:MHz,sgain:dB,snoise_figure:dB,spower_dbm:dBm,spower_w:W,sp1db_dbm:dBm,sp1db_w:W,ssaturated_power_w:W,sip3_dbm:dBm,ssupply_voltage:V
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